Semiconductor device, semiconductor device design method, semiconductor device design method recording medium, and semiconductor device design support system

ABSTRACT

Repeater cells each comprising a buffer or an inverter and an n+ diffusion layer-P well type protection diode or a p+ diffusion layer-N well type antenna protection diode connected to an input pin of the buffer or the inverter for preventing antenna damage or an antenna rule error from occurring are previously registered by registration means  511  as the cells to be registered in a cell library  505.  Whether or not a wiring conductor conducting to a gate electrode becomes an antenna ratio exceeding an allowed antenna ratio in the semiconductor device is determined by determination means  514  and if the wiring conductor exceeds the allowable antenna ratio, one or more repeater cells are inserted into any point of the wiring conductor by selection means  515.

BACKGROUND OF THE INVENTION

This invention relates to a semiconductor device, a semiconductor devicedesign method, a recording medium recording a program for executing thesemiconductor device design method, and a semiconductor device designsupport system and in particular to a semiconductor device, asemiconductor device design method, a semiconductor device design methodrecording medium, and a semiconductor device design support systemcapable of preventing antenna damage caused by an antenna effectoccurring in a plasma step at the metal wiring formation time in asemiconductor process.

In recent semiconductor process wiring steps, various plasma techniqueshave been used. The representative plasma techniques include dry etchingat the wiring layer patterning, plasma TEOS film deposition of wiringlayer insulating film in a multi-layered wiring step, and the like, forexample, which will be hereinafter referred to as plasma steps.

For example, when plasma etching is executed, if a diffusion layer doesnot connect to metal wiring, plasma charges accumulate in the metalwiring and an electric current flows into the gate oxide film of thetransistor to which the metal wiring connects. The current causes suchtrouble of destruction of the gate oxide film, change in the transistorcharacteristics because of film quality change of the gate oxide film,or degradation of the hot carrier life. Such phenomena are called“antenna effect” and trouble caused by the antenna effect will behereinafter referred to as “antenna damage.” This antenna damage is alsocaused by the antenna effect due to side walls of the of the metalwiring. In order to simplify the explanation, only areas of the metalwirings are taken into consideration.

Such antenna damage proceeds toward the worse when micro-miniaturizationdevelops; the factors are as follows:

First, the gate oxide film itself of a transistor becomes thin andpressure resistance of the gate oxide film considerably lowers ascompared with the conventional process. There is an estimation that asthe film is furthermore thinned, the antenna damage is remedied becausethe tunnel current in the gate oxide film grows. However, it is saidthat antenna rule proceeds toward the worse until at least the gateoxide film thickness of about 5 nm generally used with CMOS according to0.25-μm design rule.

Second, the minimum gate width reduces with micro-miniaturization ofprocess, but the wiring length is not much shortened althoughmicro-miniaturization of process develops, because the signal wiringlength does not lessen if the chip size set considering yield, etc., ismicro-miniaturized to about 10 mm square.

Third, although damage caused by plasma entering from a side wall ofwiring at the over-etching in a dry etching step of wiring is the mainfactor of the antenna damage, if the wiring width is thinned, the wiringfilm thickness cannot be so thinned for the purposes of providingresistance to electro-migration of wiring and suppressing the resistancevalue.

Fourthly, as the wiring pattern becomes fine, the plasma density-at theetching time also tends to rise.

Because of the factors as described above, if the antenna ratio is aboutseveral thousands in the recent fine process, antenna damage such asdestruction of a gate oxide film or characteristic degradation of atransistor has occurred during the manufacturing process in extremelygeneral designed LSI although no problem arises even in the antennaratio of about a hundred thousand in the conventional CMOS generation,etc., according to 0.8-μm design rule. The “antenna ratio” generallyrefers to the ratio between the area of a gate oxide film and the areaof a conductive layer in which plasma charges occurring at the plasmaetching time are accumulated.

Against the backdrop, it becomes necessary to take countermeasuresagainst electrostatic destruction in the chip considering a waferdiffusion step apart from ESD protection on packaging and handlingrequired for conventional I/O pins.

The above-described “antenna ratio of about several thousands” meansthat design considering the antenna damage is required not only for along pattern such as a power supply, but also in general signal wiringin LSI. This is shown using general values of the current process.

For example, assuming that the area of a gate oxide film portion,namely, gate length X gate width is 0.25 μm×0.6 μm and that the wiringwidth is 0.4 μm and applying the antenna rule of “assuming wiring withantenna ratio=3000 or more to be an error, ” the allowed wiring lengthbecomes 1125 μm. However, in the antenna ratio calculation, theconductive layer area in which plasma charges are accumulated iscalculated as the area of wiring only.

Therefore, to use such metal wiring running on one side of the chip ofLSI having a chip size of 10 mm square as described above, the antennarule is applied and the metal wiring becomes antenna wiring that cancause antenna damage. However, this does not mean that whenever such anantenna ratio is applied, antenna damage occurs. If a diffusion layerconnects to the target wiring in a plasma step, plasma charges escapevia the diffusion layer, thus antenna damage does not occur in the gateoxide film; this fact also need to be considered. This means that if analuminum pattern with the gate oxide film connecting to long aluminumwiring, not connected to the diffusion layer exists, an antenna ruleerror occurs.

Next, how antenna damage, namely, an antenna rule error occurs in theactual LSI design and spec fic examples of conventional countermeasuresto be taken when the antenna damage, namely, an antenna rule erroroccurs will be discussed.

First, specific examples of comparatively easy countermeasures againstantenna image are given. FIG. 16 is a schematic diagram to show a statein which an unused input pin in a functional block is connected to apower supply trunk and potential is fixed. In the figure, in afunctional block 2101 such as RAM or ROM, a second metal input pin 2102unused is connected via first metal wiring 2103 to a second metal powersupply trunk 104 and potential is fixed. The second metal power supplytrunk 104 is connected to a third metal power supply trunk 105. When thesecond metal is etched in a wiring step of such configured LSI, thethird metal power supply trunk 105 does not yet exist. Thus, the secondmetal power supply trunk 104 becomes giant antenna wiring in a floatingstate not connected to a diffusion layer with respect to a gate oxidefilm connected to the second metal input pin 2102 unused.

Available as the countermeasures to be taken when such an antenna erroroccurs are a method of adding an antenna protection diode as shown inFIG. 17A or 17B to the second metal power supply trunk 104 of theantenna wiring or the first metal wiring 2103, a method of changing thefirst metal wiring 2103 to third metal wiring, and the like.

If an antenna protection diode is added according to the firstcountermeasure, plasma charges escape through a diffusion layer of theprotection diode as described above, so that occurrence of antennadamage is eliminated. FIG. 17A is a schematic representation to show thestructure of an n+ diffusion layer-P well type antenna protection diode2201 consisting of an n+ diffusion layer 2202 and a P well 2203 fixed topower supply potential VSS and FIG. 17B is a schematic representation toshow the structure of a p+ diffusion layer-N well type antennaprotection diode 2211 consisting of a p+ diffusion layer 2212 and an Nwell 2213 fixed to power supply potential VDD.

If the first metal wiring 2103 is changed to third metal wiringaccording to the second countermeasure, the functional block 2101 andthe second metal power supply trunk 104 are separated at the etchingtime of the second metal forming the second metal power supply trunk104, thus antenna damage cannot occur.

If an unused input pin is fixed in a normal block formed of a standardmacro cell, usually it is fixed to a power supply in the macro cell or apower supply trunk to which the power supply in the macro cell isconnected. Since the power supply in the standard macro cell is providedwith a substrate contact almost beyond doubt, a path to a well via adiffusion layer exists. Thus, in such a block formed of a standard cell,antenna damage in an unused input pin with potential fixed can littleoccur.

Next, a specific example of signal wiring harder to counter antennadamage will be discussed with reference to FIGS. 18A to 18C. FIG. 18A isa schematic diagram to describe a layout of signal wiring from oneinverter 2301 to another inverter 2302.

In an automatic placement wiring tool, normally longitudinal and lateralwiring layers assigned are used for wiring without considering anantenna rule as described above. Assume that one signal wiring is laidout as first metal wiring 2312 which is very long exists, as shown inFIG. 18A. That is, it is a wiring layout using first metal wiring 2311,2312 and second metal wiring 2321.

In the layout in FIG. 18A, it seems that antenna damage does not occurbecause a drain diffusion layer of a transistor in the inverter 2301 isconnected to the signal wiring. However, it should be noted that whenthe first metal wiring 2312 is etched, the second metal wiring 2321 doesnot exist. That is, the drain diffusion layer of the inverter 2301 isnot connected to the first metal wiring 2312, which is long and becomeswiring that can cause antenna damage for a transistor gate oxide film ofthe inverter 2302.

Layout design considering the antenna rule is not yet general andeffective countermeasures against antenna damage are not established asthings stand now. Used as the countermeasures against antenna damage atpresent are a method of adding an antenna protection diode to firstmetal wiring 2312 b which is long and can cause antenna damage as shownin FIG. 18B, a method of providing diffusion layer wiring 2503 at anintermediate point of the first metal wiring 2312 in FIG. 18A, as shownin FIG. 19A, a method of specifying use of upper layer wiring 2541 suchas second or third metal as the first metal wiring 2312 in FIG. 18A andagain performing automatic wiring processing, as shown in FIG. 19B, andthe like, for example.

If an antenna protection diode is added according to the firstcountermeasure, plasma charges escape through a diffusion layer of theprotection diode as described above, so that occurrence of antennadamage is eliminated. The antenna protection diode may be an n+diffusion layer-P well type antenna protection diode 2303 as shown inFIG. 18B or a p+ diffusion layer-N well type antenna protection diode2304 as shown in FIG. 18C; it may be designed to apply a reverse bias toa signal line to which the protection diode is connected so that noproblem occurs on the operation if the potential level of the signalline changes to high or low. To be precise, if the antenna protectiondiode is added, the load of the signal line becomes heavy becausediffusion capacitance is added. However, if diodes are embedded on maskoperation all in wiring that can cause an antenna error, a wiring loadproblem arises; a load capacitance problem hardly occurs if a contact ofthe minimum size is added or so.

If a wiring route passing through the diffusion layer wiring 2503 isprovided at an intermediate point of the first metal wiring 2312 in FIG.18A according to the second countermeasure, plasma charges escapethrough the diffusion layer, so that occurrence of antenna damage iseliminated. FIG. 19A shows an example of using an n+ diffusion layerformed on a P well fixed to power supply potential VSS.

Further, if use of the third metal wiring 2541 as the first metal wiring2312 is specified and automatic wiring processing is again performed, asshown in FIG. 19B, according to the third countermeasure, at the etchingtime of the second metal forming the second metal wiring 2321, thesecond metal wiring 2321 and the gate oxide film of the inverter 2302are separated and the diffusion layer of the inverter 2301 is connectedto the second metal wiring 2321, thus antenna damage cannot occur.

However, the above-described conventional countermeasures taken whenantenna damage or an antenna rule error occurs involve the followingproblems:

First, throughout all the countermeasures, an additional correction toan antenna error is required and when an attempt is made to use a CADtool for automation, a clear and effective procedure does not exist.That is, an antenna rule error is frequently found at a one-chip wiringlayout stage close to the end of design and the current automaticplacement wiring tool of CAD does not provide a function for avoiding anantenna rule error. Therefore, with the current state of the art, thedesigner manually takes such measures of adding an antenna protectiondiode to a device for which an error is found at the stage where a maskorder is about to be given. Such a relapse in the design stage andoccurrence of manual work become the largest problem in designautomation.

The second countermeasure (see FIG. 19A) involves a performance problem.This means that to provide a wiring route passing through the diffusionlayer at an intermediate point of metal wiring, a large resistance valueis added as compared with the metal wiring owing to the diffusion layer,worsening the circuit operation speed. If the process is a silicideprocess, such worsening of the circuit operation speed is a littlealleviated.

A common problem to the first and second countermeasures is to placelimitations on a design style. In recent years, a technique of executingsteps in parallel with layout design as much as possible has beenadopted for shortening the time from LSI design to manufacturing. Forexample, at completion of a chip at the block level, if the blocks areplaced and a mask order is given from the ground and diffusion isstarted on one hand and layout design is furthermore advanced and anantenna rule error is found in the later layout design using aluminumwiring on an upper layer on the other hand, the error cannot be handledby changing the design of the lower layer.

In such a case, the error has to be avoided by changing wiring; alimitation is placed so as to use upper layer metal in place of themetal wiring where the antenna rule error occurs, for example. In thiscase, the wiring is connected to the diffusion layer at the wiringetching stage and the antenna rule error is solved. However, if theerror occurrence frequency increases, wiring corrections ascountermeasures against the antenna rule errors are made to the devicewith wiring well laid out, largely changing the congestion degree of theupper layer aluminum wiring and the wiring pattern. Then, when thewiring is again executed, it cannot be fitted as the same area as beforethe antenna rule error corrections are made is held, or the wiringcongestion degree and the wiring length are changed, thus new trouble ofoccurrence of a timing error on logical circuit design not previouslyoccurring is caused.

In the recent LSI design, signals whose wiring delay is to be suppressedhave been wired at gentle pitches with thick metal film wiring of anupper layer as much as possible; an increase in the congestion degree ofthe upper layer wiring is undesirable for speed performance.

SUMMARY OF THE INVENTION

It is therefore an object of the invention to provide a semiconductordevice, a semiconductor device design method, a semiconductor devicedesign method recording medium, and a semiconductor device designsupport system capable of preventing antenna damage caused by an antennaeffect occurring in a plasma step at the metal wiring formation time ina semiconductor process.

It is another object of the invention to provide a semiconductor device,a semiconductor device design method, a semiconductor device designmethod recording medium, and a semiconductor device design supportsystem that can handle antenna damage or an antenna rule error at highspeed and precisely by automatic processing of a CAD tool, etc., if theantenna damage or antenna rule error occurs.

It is still another object of the invention to provide a semiconductordevice, a semiconductor device design method, a semiconductor devicedesign method recording medium, and a semiconductor device designsupport system that can take countermeasures against antenna damage oran antenna rule error with upper layer metal wiring as much as possibleby automatic processing of a CAD tool, etc., if the antenna damage orantenna rule error occurs, and resultantly can handle the antenna damageor antenna rule error with small-scale change so that the operationtiming on logical circuit design does not largely change before andafter the countermeasures are taken.

According to a first aspect of the invention, there are provided asemiconductor device, a semiconductor device design method, asemiconductor device design method recording medium, and a semiconductordevice design support system, wherein as cells, etc., to be registeredin a cell library, etc., registration step (registration means)previously registers a first cell, etc., having a first conduction typediode comprising a first conduction type diffusion layer connected to aninput pin of the cell, etc., and a second conduction type well connectedto a second power supply or a second conduction type diode comprising asecond conduction type diffusion layer connected to the input pin and afirst conduction type well connected to a first power supply and asecond cell, etc., not containing the first or second conduction typediode and comprising the same logic as and the same drive capability asthe first cell, etc., determination step (determination means)determines whether or not a wiring conductor conducting to the input pinand a gate electrode becomes an antenna ratio exceeding an allowedantenna ratio in the semiconductor device when the antenna ratio is aratio between the area of the wiring conductor conducting to the gateelectrode and the area of the gate electrode, and selection step(selection means) selectively uses the first cell, etc., if the inputpin conducts to the gate electrode exceeding the antenna ratio.

That is, after execution of automatic placement and wiring, replacementof cells, etc., occurs. However, a protection diode is added only to anode requiring a countermeasure against occurrence of possible antennadamage or a possible antenna rule error, thus an increase in thesemiconductor device area is suppressed and extra protection diodes arenot formed; an increase in the parasitic load capacitance of wiring canbe suppressed accordingly and as a result, the signal propagation delaytime can be shortened and the power consumption of the semiconductordevice can be decreased.

According to a second aspect of the invention, there are provided asemiconductor device, a semiconductor device design method, asemiconductor device design method recording medium, and a semiconductordevice design support system, wherein as cells, etc., to be registeredin a cell library, etc., registration step (registration means)registers repeater cells each having a buffer or an inverter and a firstconduction type diode comprising a first conduction type diffusion layerconnected to an input pin of the buffer or the inverter and a secondconduction type well connected to a second power supply or a secondconduction type diode comprising a second conduction type diffusionlayer connected to the input pin and a first conduction type wellconnected to a first power supply, determination step (determinationmeans) determines whether or not a wiring conductor conducting to a gateelectrode in the semiconductor device exceeds an allowed antenna ratioin the semiconductor device when the antenna ratio is a ratio betweenthe area of the wiring conductor conducting to the gate electrode andthe area of the gate electrode, and insertion step (insertion means)inserts one or more repeater cells into any point of the wiringconductor if the wiring conductor exceeds the allowed antenna ratio.Preferably, the repeater cell comprises two buffers or invertersconnected in series and the output buffer or inverter has a larger drivecapability than the input buffer or inverter.

Thus, a long wiring conductor where it is feared that antenna damage oran antenna rule error may occur is divided by inserting one or morerepeater cells, whereby the signal propagation delay of the wiring issuppressed (first advantage). As the length of the wiring is shortened,antenna damage can be suppressed (second advantage). Further, aprotection diode is added to an input pin of a repeater cell, whereby anantenna rule error does not occur for the divided metal wiring connectedto the repeater cell (third advantage).

According to a third aspect of the invention, there are provided asemiconductor device, a semiconductor device design method, asemiconductor device design method recording medium, and a semiconductordevice design support system, wherein a substrate contact containing afirst conduction type diffusion layer and a first conduction type wellor a substrate contact containing a second conduction type diffusionlayer and a second conduction type well is produced so that an unusedinput pin of the cells, etc., is brought into conduction to a first orsecond power supply via the substrate contact, whereby a path flowinginto the diffusion layer is provided even in the configuration to whicha protection diode is not added. Thus, to connect an unused pin to apower supply trunk and fix the potential of the unused pin, an antennarule error is not caused. Since it leads to stabilization of the wellpotential, noise resistance, latch-up resistance, and the like of thesemiconductor device are also improved.

According to a fourth aspect of the invention, there are provided asemiconductor device, a semiconductor device design method, asemiconductor device design method recording medium, and a semiconductordevice design support system, wherein each wiring conductor conductingto a gate electrode in each of the wiring layers, when a ratio betweenthe area of the wiring conductor conducting to the gate electrode andthe area of the gate electrode is assumed to be an antenna ratio, islimited to an area or a wiring length such that the wiring conductorbecomes an antenna ratio of less than a half an antenna ratio allowedessentially in the semiconductor device and is divided into at leastthree parts for wiring. Thus, the length of wiring continuously runningin the same wiring layer is limited to less than a half the originalantenna rule value and is divided into at least three parts, wherebywiring forcibly is changed, namely, long wiring can be divided, wherebythe antenna ratio of wiring can be suppressed and resultantly, thenumber of antenna error occurrences can be decreased.

According to a fifth aspect of the invention, there are provided asemiconductor device design method, a semiconductor device design methodrecording medium, and a semiconductor device design support system,wherein registration step (registration means) defines a position wherea first conduction type diffusion layer and a contact can or cannot beplaced on a second conduction type well or a position where a secondconduction type diffusion layer and a contact can or cannot be placed ona first conduction type well as shape data of each of the cells, etc.,to be registered in a cell library, etc., determination step(determination means) determines whether or not a wiring conductorconducting to a gate electrode in the semiconductor device exceeds anallowed antenna ratio in the semiconductor device when the antenna ratiois a ratio between the area of the wiring conductor conducting to thegate electrode and the area of the gate electrode, and insertion step(insertion means) selectively inserts a first conduction type diode or asecond conduction type diode if the wiring conductor exceeds the allowedantenna ratio.

Thus, to automatically insert a protection diode, it is not necessary todetermine the placement position of the protection diode while seeingvarious related layers of a diffusion area, polysilicon, etc., in a CAD(computer aided design) system, so that the processing amount in the CADsystem may be very light.

According to a sixth aspect of the invention, there are provided asemiconductor device, a semiconductor device design method, asemiconductor device design method recording medium, and a semiconductordevice design support system, wherein determination step (determinationmeans) determines whether or not a wiring conductor conducting to a gateelectrode in the semiconductor device and having long wiring in an ithwiring layer exceeds an allowed antenna ratio in the semiconductordevice when the antenna ratio is a ratio between the area of the wiringconductor conducting to the gate electrode and the area of the gateelectrode; and if the wiring conductor exceeds the allowed antennaratio, insertion step (insertion means) cuts the long wiring in the ithwiring layer in the proximity of the gate electrode and forms the wiringconductor by connecting a short wiring conductor in the ith wiring layerfrom the gate electrode to the cut point and a long wiring conductor inthe ith wiring layer ahead the cut point by a bridge wiring conductor ofa length as long as at least two grids in a jth wiring layer of an upperlayer above the ith wiring layer (i<j≦n).

Thus, effective countermeasures against an antenna rule error can betaken. For example, the long wiring in the ith wiring layer causing anantenna rule error before a bridge wiring conductor is placed in the(i+1)th wiring layer is disconnected from the gate electrode at theetching time of wiring of the ith wiring layer by connecting via thebridge wiring conductor in the (i+1)th wiring layer and thereforecomplete countermeasures against an antenna rule error can be taken. Itis feared that bridge wiring may be unable to be used for the top layerbecause a wiring layer does not exist on the top layer. However, whentop layer wiring is etched, a desired circuit configuration is almostaccomplished, thus a buffer diffusion layer for driving signal wiring isconnected to all long wiring conductors and there is no antenna damagein the wiring formation step of the top layer.

That is, in the invention, if two empty grids of wiring exist in the jthwiring layer of an upper layer (or if two empty grids can be generated),antenna damage or an antenna rule error can be prevented from occurringand the point where bridge wiring is placed is determined by finding anarea from the side near the gate electrode of long wiring, so thatoccurrence of antenna damage caused by the remaining wiring leading tothe gate electrode side after the long wiring is cut by the bridgewiring can also be suppressed. Further, basically (unless empty gridsare forcibly provided), empty grids of wiring in the jth wiring layerare used, thus a large move of any other wiring little occurs, the wholelayout little changes before and after the bridge wiring countermeasureagainst an antenna rule error is taken, and signal timing change on alarge logical circuit does not occur either. Since only an upper wiringlayer is used, if an mask order is started in order from the bottom inparallel with layout design to shorten the design period, a wiringlayout of upper wiring layers can be handled easily to deal with theantenna rule.

According to a seventh aspect of the invention, there are provided asemiconductor device design method, a semiconductor device design methodrecording medium, and a semiconductor device design support system,wherein in the insertion step (insertion means), finding step (searchmeans) finds an area of two or more contiguous empty grids in the jthwiring layer overlapping the long wiring in the ith wiring layer fromthe side near the gate electrode relative to the long wiring in the ithwiring layer and determines insertion of the bridge wiring conductorinto the found area.

Thus, the bridge wiring countermeasure against an antenna rule errorprovided by the insertion step (insertion means) can be efficientlybuilt in the design support system for use. As the bridge wiring isinstalled, change is only made to a wiring layout of a structure whereinonly the two-grid wiring of the long wiring originally existing in theith wiring layer is lifted up to the jth wiring layer above the ithwiring layer, thus the total wiring length of the signal wiring, theparasitic additional capacitance existing between the signal wiring andany other wiring, and the like little change. Further, the bridge wiringrequires at least two via electrodes to make connection between the ithand jth wiring layers and two-via electrode resistance is added to thesignal wiring, but can be almost ignored. Thus, the signal timing on thelogical circuit, etc., little changes before and after thecountermeasures against an antenna rule error are taken. This eliminatessuch former inefficient design procedure repeating corrections betweenthe normal layout design and design of the countermeasures against anantenna rule error.

According to an eighth aspect of the invention, there are provided asemiconductor device design method, a semiconductor device design methodrecording medium, and a semiconductor device design support system,wherein if the finding step (search means) cannot determine an insertionarea, the insertion step (insertion means) finds a first area of anempty grid in the jth wiring layer overlapping the long wiring in theith wiring layer from the side near the gate electrode relative to thelong wiring in the ith wiring layer, sets a position of the ith wiringlayer overlapping the first area to a cut point of the long wiring,moves a long wiring conductor ahead the cut point in the ith wiringlayer to another empty area containing a second area in the jth wiringlayer overlapping the cut point after the move, and adopts a wiringconductor spread over the first and second areas as the bridge wiringconductor in the jth wiring layer. Thus, even if two or more contiguousempty grids of wiring do not exist in the jth wiring layer of an upperlayer, if a first area of an empty grid in the jth wiring layer, an areato which the wiring conductor ahead the cut point in the ith wiringlayer can be moved, and a second area of an empty grid in the jth wiringlayer can be found, antenna damage or an antenna rule error can bereliably prevented from occurring.

According to a ninth aspect of the invention, there are provided asemiconductor device design method, a semiconductor device design methodrecording medium, and a semiconductor device design support system,wherein if the finding step (search means) cannot determine an insertionarea, the insertion step (insertion means) finds a first area of anempty grid in the jth wiring layer overlapping the long wiring in theith wiring layer from the side near the gate electrode relative to thelong wiring in the ith wiring layer, inserts the bridge wiring conductorin the jth wiring layer to a second area of a length as long as at leasttwo grids from the first area, and again wires wiring conductor in theith wiring layer overlapping the second area. Thus, even if two or morecontiguous empty grids of wiring do not exist in the jth wiring layer ofan upper layer, if a first area of an empty grid in the jth wiring layercan be found, antenna damage or an antenna rule error can be reliablyprevented from occurring. Since the wiring layout is corrected as thewiring is shifted as a whole, the layout of the wiring conductors is notlargely changed and the operation timing, etc., little changes beforeand after the countermeasure against an antenna rule error is taken.

According to a tenth aspect of the invention, there are provided asemiconductor device design method, a semiconductor device design methodrecording medium, and a semiconductor device design support system,wherein if the finding step (search means) cannot determine an insertionarea, the insertion step (insertion means) finds a first area and asecond area which are discontiguous and contain each an empty grid inthe jth wiring layer overlapping the long wiring in the ith wiring layerfrom the side near the gate electrode relative to the long wiring in theith wiring layer and inserts a bridge wiring conductor in a kth wiringlayer above the jth wiring layer (j<k≦n) between the first and secondareas. Thus, even if two or more contiguous empty grids of wiring do notexist in the jth wiring layer of an upper layer, if two empty areas canbe found, the kth wiring layer can be used to install bridge wiring.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are schematic diagrams to conceptually describe a layoutof a semiconductor device of a first embodiment of the invention;

FIG. 2 is a block diagram of a semiconductor device design supportsystem of the first embodiment of the invention;

FIG. 3 is a flowchart to describe a semiconductor device design methodof the first embodiment of the invention;

FIGS. 4A to 4E are schematic diagrams to conceptually describe a layoutof a semiconductor device of a second embodiment of the invention;

FIG. 5 is a flowchart to describe a semiconductor device design methodof the second embodiment of the invention;

FIGS. 6A to 6D are schematic diagrams to conceptually describe a layoutof a semiconductor device of a fourth embodiment of the invention;

FIGS. 7A to 7C are schematic diagrams to conceptually describe a layoutof a semiconductor device of a fifth embodiment of the invention;

FIG. 8 is a flowchart to describe a semiconductor device design methodof the fifth embodiment of the invention;

FIGS. 9A and 9B are schematic diagrams to conceptually describe a layoutof a semiconductor device of a sixth embodiment of the invention;

FIG. 10 is a flowchart to describe a semiconductor device design methodof the sixth embodiment of the invention;

FIGS. 11A to 11D are wiring layout pattern diagrams to illustrate aspecific application example of the sixth embodiment; FIG. 11A is apattern diagram before countermeasure is taken, FIG. 11B is a patterndiagram after countermeasure is taken, FIG. 11C is a schematicrepresentation of bridge wiring with equal direction margin, and FIG.11D is a schematic representation of bridge wiring with differentdirection margin;

FIGS. 12A and 12B are layout pattern diagrams (No. 1) to describe acountermeasure to be taken if two or more contiguous empty grids ofwiring do not exist; FIG. 12A is a pattern diagram before countermeasureis taken and FIG. 12B is a pattern diagram after countermeasure istaken;

FIGS. 13A and 13B are layout pattern diagrams (No. 2) to describe acountermeasure to be taken if two or more contiguous empty grids ofwiring do not exist;

FIGS. 14A to 14C are layout pattern diagrams (No. 3) to describe acountermeasure to be taken if two or more contiguous empty grids ofwiring do not exist;

FIGS. 15 is a schematic diagram to conceptually describe a layout of asemiconductor device of a third embodiment of the invention;

FIG. 16 is a schematic diagram to show a state in which an unused inputpin in a functional block is connected to a power supply trunk andpotential is fixed in related art;

FIG. 17A is a schematic diagram to describe a method of adding anantenna protection diode and FIG. 17B is a schematic diagram to describea method of changing first metal wiring to third metal wiring;

FIG. 18A is a schematic diagram to describe a layout of signal wiringfrom one inverter to another inverter and FIGS. 18B and 18C areschematic diagrams to describe methods of adding an antenna protectiondiode; and

FIG. 19A is a schematic diagram to describe a method of providingdiffusion layer wiring at an intermediate point of first metal wiringand FIG. 19B is a schematic diagram to describe a method of specifyingupper layer wiring and again performing automatic wiring processing.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of a semiconductor device, a semiconductor device designmethod, a recording medium, and a semiconductor device design supportsystem of the invention will be discussed in order of first embodimentto sixth embodiment in detail with reference to the accompanyingdrawings. Although the semiconductor device, the semiconductor devicedesign method, and the semiconductor device design support systemaccording to the invention will be discussed in detail in thedescription of each embodiment, the recording medium according to theinvention is a recording medium recording a program for executing thesemiconductor device design method and therefore the description of therecording medium is contained in that of the semiconductor device designmethod.

The semiconductor device, the semiconductor device design method, therecording medium, recording medium, and the semiconductor device designsupport system of the invention are fitted to a gate array method, amaster slice method, or a standard cell method in LSI layout design. Thegate array or master slice method refers to a method of previouslypreparing a diffused wafer or a master slice comprising a regular arrayof sets of elements called basic cells and determining a wiring patternaccording to a given logical circuit, thereby providing desired LSI. Inthe method, macro cells of logical gates and logical functional blocksprovided by combining the basic cells and adding a wiring pattern areregistered in a library and are placed and wired for providing desiredLSI. The standard cell method refers to a method of previouslyregistering cells (functional blocks) in a library, basically arrangingthe cells almost equal in height in a row, and determining a wiringpattern according to a given logical circuit, thereby providing desiredLSI. The invention can also be applied to a general cell method and abuilding block method of arranging a large number of blocks of any sizeand the scope of the invention is not limited to the methods listedhere. Although embodiments of the semiconductor device, thesemiconductor device design method, the recording medium, and thesemiconductor device design support system of the invention are givenfor describing the invention specifically, the invention is not limitedto the embodiments and various modifications can be made withoutdeparting from the spirit and scope of the semiconductor device, thesemiconductor device design method, the recording medium, and thesemiconductor device design support system according to the invention.

FIRST EMBODIMENT

Next, a semiconductor device, a semiconductor device design supportsystem, and a semiconductor device design method according to a firstembodiment will be discussed with reference to FIGS. 1 to 3. FIGS. 1Aand 2B are schematic diagrams to conceptually describe a layout of thesemiconductor device of the first embodiment. FIG. 2 is a block diagramof the semiconductor device design support system of the firstembodiment. FIG. 3 is a flowchart to describe the semiconductor devicedesign method of the first embodiment.

The embodiment is characterized by the fact that first-kind cells eachcomprising an n+ diffusion layer-P well type protection diode (or a p+diffusion layer-N well type antenna protection diode; for the structuresof the diodes, see FIGS. 17A and 16B) connected to an input pin forpreventing antenna damage or an antenna rule error from occurring andsecond-kind cells each not containing the protection diode and havingthe same logic as and the same drive capability as the first-kind cellare previously registered by registration means 511 or at a registrationstep S601 as the cells to be registered in a cell library 505 and thatwhether or not a wiring conductor conducting to an input pin and a gateelectrode becomes an antenna ratio exceeding an allowed antenna ratio inthe semiconductor device is determined by determination means 514 or ata determination step S604 and if the input pin conducts to the wiringconductor exceeding the allowable antenna ratio, the first-kind cell isselectively used by selection means 515 or at a selection step S605. Theantenna ratio is the ratio between the area of the wiring conductorconducting to the gate electrode and the area of the gate electrode. Forexample, the antenna ratio is set to a value of about 5000 in a 0.35-μmdesign rule or a value of about 3500 in a 0.25-μm design rule.

FIG. 1A is a schematic diagram to illustrate a wiring layout surroundinga second-kind cell 401 comprising a NAND gate circuit 407, wherein metalwiring 403 and metal wiring 405 are connected to input pins 402 and 404.In the embodiment, for example, if the metal wiring 403 is determinedantenna wiring exceeding the allowable antenna ratio and resulting in anantenna rule error, the second-kind cell 401 is replaced with afirst-kind cell 411, as shown in FIG. 1B. That is, in FIG. 1B, thefirst-kind cell 411 comprises input pins 412 and 414 provided with n+diffusion layer-P well type protection diodes 420 and 421, respectively,for preventing antenna damage or an antenna rule error from occurring.Thus, if metal wiring 413 is antenna wiring, when it is etched, plasmacharges can escape through a diffusion layer of the protection diode420, and a transistor gate electrode of the NAND gate circuit 417becomes free of antenna damage.

Next, in FIG. 2, semiconductor device design support system 502 of theembodiment comprises registration means 511 for previously registeringcells in the cell library 505, cell placement means 512 for combiningand placing cells while referencing the cell library 505 according togiven logical circuit specifications 501, cell-to-cell wiring means 513for determining wiring between the placed cells while referencing thecell library 505 according to the given logical circuit specifications501, determination means 514 for checking a wiring conductor for antennarule, selection means 515 for replacing a cell connected to the wiringconductor where an antenna rule error occurs with a first-kind cellcomprising a protection diode connected to an input pin, and placementand wiring correction means 516 for placing the entire chip and make aminor correction to wiring, and outputs layout result (placement andwiring data) 503.

In the embodiment, a layout of the semiconductor device is designed asfollows: As shown in the flowchart of FIG. 3, first at step S601, a cellis registered in the cell library 505 by the registration means 511. Theregistered cell is a first-kind cell comprising an n+ diffusion layer-Pwell type protection diode (or a p+ diffusion layer-N well type antennaprotection diode) connected to an input pin for preventing antennadamage or an antenna rule error from occurring or a second-kind cell notcontaining the protection diode and having the same logic as and thesame drive capability as the first-kind cell. At step S602, second-kindcells are combined and placed by the cell placement means 512 whilereferencing the cell library 505 according to given logical circuitspecifications 501. At step S603, wiring between the placed second-kindcells is determined by the cell-to-cell wiring means 513 whilereferencing the cell library 505 according to the given logical circuitspecifications 501.

Next, at step S604, a wiring conductor is checked for antenna rule bythe determination means 514. That is, whether or not the wiringconductor conducting to an input pin and a gate electrode satisfies theallowable antenna ratio is determined. If the input pin conducts withthe wiring conductor exceeding the allowable antenna ratio (an antennarule error occurs), control goes to step S605 at which the second-kindcell comprising the input pin is replaced with a first-kind cell by theselection means 515. Then, at step S606, the placement and wiringcorrection means 516 adjusts placement of other cells affected byreplacing the second-kind cell with the first-kind cell and makes aminor correction to the cell-to-cell wiring after the placement isadjusted. If no antenna rule error occurs at step S604, then the layoutdesign is terminated.

The description assumes that the first-kind and second-kind cells havethe same logic and the same drive capability. However, if they have thesame shape, namely, the same cell area and the same pin placement, anantenna rule error can be handled simply by replacing the cells and stepS606 in the flowchart of FIG. 3 (adjustment of cell placement and minorcorrection of wiring) becomes unnecessary; the antenna rule error can behandled more easily. On the other hand, if importance is attached to thechip area rather than a minute increase in the design time, thesecond-kind cells 401 not comprising protection diodes may be packed assmall as possible in design.

As described above, in the embodiment, after execution of automaticplacement and wiring, replacement of cells occurs as compared with thefirst embodiment. However, a protection diode is added only to a noderequiring a countermeasure against occurrence of possible antenna damageor a possible antenna rule error, thus an increase in the semiconductordevice area is suppressed and extra protection diodes are not formed; anincrease in the parasitic load capacitance of wiring (input capacitanceof input pin) can be suppressed accordingly and as a result, the signalpropagation delay time can be shortened and the power consumption of thesemiconductor device can be decreased.

THIRD EMBODIMENT

Next, a semiconductor device, a semiconductor device design supportsystem, and a semiconductor device design method according to a secondembodiment will be discussed with reference to FIGS. 2, 4A to 4E and 5.FIGS. 4A to 4E are schematic diagrams to conceptually describe a layoutof the semiconductor device of the second embodiment. FIG. 5 is aflowchart to describe the semiconductor device design method of thesecond embodiment.

The embodiment is characterized by the fact that repeater cells eachcomprising a buffer or an inverter and an n+ diffusion layer-P well typeprotection diode (or a p+ diffusion layer-N well type antenna protectiondiode; for the structures of the diodes, see FIGS. 17A and 17B)connected to an input pin of the buffer or the inverter for preventingantenna damage or an antenna rule error from occurring are previouslyregistered by registration means 511 or at a registration step S801 asthe cells to be registered in a cell library 505 and that whether or nota wiring conductor conducting to a gate electrode becomes an antennaratio exceeding an allowed antenna ratio in the semiconductor device isdetermined by determination means 514 or at a determination step S804and if the wiring conductor exceeds the allowable antenna ratio, one ormore repeater cells are inserted into any point of the wiring conductorby selection means 515 or at a selection step S805.

The semiconductor device of the embodiment will be discussed withreference to the schematic diagrams of FIGS. 4A to 4E. In the relatedart, in the layout where the first metal wiring 2312 which is very longexists, as shown in FIG. 18A, when the first metal wiring 2312 isetched, the drain diffusion layer of the inverter 2301 is not connectedto the first metal wiring 2312 and the wiring can cause antenna damagefor the transistor gate oxide film of the inverter 2302. To counter theproblem, in FIG. 4A, long wiring is divided by a buffer 704, called arepeater, for lessening the antenna ratio to a gate oxide film of theinverter 702. Hitherto, the repeater has been used to suppress an RCdelay of long wiring; such use shows an effect on both shortening of thesignal propagation delay time and countermeasures against an antennarule error.

FIG. 4B shows an example of a repeater cell 713 made up of a buffer 714and an n+ diffusion layer-P well type protection diode 715 connected toan input pin of the buffer 714. If a repeater cell 703 is made of thebuffer 704 as in FIG. 4A, antenna damage may occur in a transistor gateoxide film of the buffer 704. Then, as shown in FIG. 4B, preferably then+ diffusion layer-P well type protection diode 715 is added to theinput pin of the buffer 714 for preventing antenna damage or an antennarule error from occurring, whereby occurrence of antenna damage can beprevented reliably.

A repeater cell can comprise an inverter in place of a buffer. In thiscase, since the signal wiring logic is inverted by the inverter, tworepeater cells are inserted almost at equal intervals. That is, as shownin FIG. 4C, wiring causing an antenna rule error is divided into threeparts and a repeater cell 723 made up of an inverter 724 and an n+diffusion layer-P well type protection diode 725 connected to an inputpin of the inverter 724 and a repeater cell 726 made up of an inverter727 and an n+ diffusion layer-P well type protection diode 728 connectedto an input pin of the inverter 727 are inserted into the divisionpoints.

Further, a repeater cell can also comprise two inverters connected inseries. That is, as shown in FIG. 4D, a repeater cell 733 is made up ofinverters 734 and 735 and an n+ diffusion layer-P well type protectiondiode 736 connected to an input pin of the inverter 735. In this case,more practically, the area of an output inverter 744 is made larger thanthat of an input inverter 745 for providing different drive capabilitiesfor the output and the input as in a repeater cell 743 shown in FIG. 4E.

Next, semiconductor device design support system 502 of the embodimenthas the configuration shown in FIG. 2 like that of the first embodiment.In the second embodiment, however, numeral 515 is insertion means forinserting one or more repeater cells into any point of the wiringconductor where an antenna rule error occurs.

In the embodiment, a layout of the semiconductor device is designed asfollows: In the flowchart of FIG. 5, first at step S801, a cell isregistered in the cell library 505 by the registration means 511. Theregistered cells include repeater cells each comprising a buffer or aninverter and an n+ diffusion layer-P well type protection diode or a p+diffusion layer-N well type antenna protection diode connected to aninput pin of the buffer or the inverter for preventing antenna damage oran antenna rule error from occurring. At step S802, cells are combinedand placed by cell placement means 512 while referencing the celllibrary 505 according to given logical circuit specifications 501. Atstep S803, wiring between the placed cells is determined by cell-to-cellwiring means 513 while referencing the cell library 505 according to thegiven logical circuit specifications 501.

Next, at step S804, a wiring conductor is checked for antenna rule bydetermination means 514. That is, whether or not the wiring conductorconducting to a gate electrode satisfies the allowable antenna ratio isdetermined. If the wiring conductor exceeds the allowable antenna ratio(an antenna rule error occurs), control goes to step S805 at which oneor more repeater cells are inserted into any point of the wiringconductor by the insertion means 515. Further, at step S806, placementand wiring correction means 516 adjusts placement of other cellsaffected by inserting the repeater cell or cells and makes a minorcorrection to the cell-to-cell wiring after the placement is adjusted.If no antenna rule error occurs at step S804, then the layout design isterminated.

As described above, in the embodiment, a long wiring conductor where itis feared that antenna damage or an antenna rule error may occur isdivided by inserting one or more repeater cells, whereby the signalpropagation delay of the wiring can be suppressed. As the length of thewiring is shortened, antenna damage is suppressed. Further, a protectiondiode is added to an input pin of a repeater cell, whereby antennadamage or an antenna rule error does not occur either for the dividedmetal wiring connected to the repeater cell.

THIRD EMBODIMENT

Next, a semiconductor device, a semiconductor device design supportsystem, and a semiconductor device design method according to a thirdembodiment will be discussed with reference to FIG. 15. FIG. 15 is aschematic diagram to conceptually describe a layout of the semiconductordevice of the fourth embodiment.

In FIG. 15, parts (a) and (b) are schematic diagrams to show a state inwhich an unused input pin of an inverter 2041 is connected to a powersupply trunk and potential is fixed. The part (a) is a plan schematicdiagram viewed from above the semiconductor device and the part (b) is asectional schematic diagram taken on line A-A′ in the part (a). In FIG.15, the unused input pin of the inverter 2041 is connected via firstmetal wiring 2015 to a second metal power supply trunk 2021 (2022) andpotential is fixed. The second metal power supply trunk 2021 (2022) isconnected to a third metal power supply trunk 2031. The second metalpower supply trunk 2021 indicates wiring of VSS and the second metalpower supply trunk 2022 indicates wiring of VDD. When the second metalis etched in the wiring step of such configured LSI, the third metalpower supply trunk 2031 does not yet exist. Thus, the second metal powersupply trunk 2021 becomes giant antenna wiring in a floating state notconnected to a diffusion layer with respect to a gate oxide filmconnected to the input pin of the inverter 2041.

In the embodiment, the following countermeasures are taken for thesecond metal power supply trunk 2021 (2022) when such an antenna ruleerror can occur: a part (c) of FIG. 15 is a plan schematic diagramviewed from above the semiconductor device for which countermeasuresagainst an antenna rule error are taken according to the embodiment anda part (d) is a sectional schematic diagram taken on line B-B′ in thepart (c). As shown here, if the unused input pin of the inverter 2041 isconnected to the second metal power supply trunk 2021 of VSS, a p+diffusion layer 2008 is formed on a P well 2007, a substrate contactconnected from the p+ diffusion layer 2008 via a via-electrode and firstmetal wiring 2014 to the second metal power supply trunk 2021 is used,and a path from the second metal power supply trunk 2021 via the p+diffusion layer 2008 to the P well 2007 is formed. If the unused inputpin of the inverter 2041 is connected to the second metal power supplytrunk 2022 of VDD, an n+ diffusion layer 2006 is formed on an N well2005, a substrate contact connected from the n+ diffusion layer 2006 viaa via-electrode and first metal wiring 2013 to the second metal powersupply trunk 2022 is used, and a path from the second metal power supplytrunk 2022 via the n+ diffusion layer 2006 to the N well 2005 is formed.To assign such a substrate contact, a part area where the substratecontact can be placed is found by performing mask operation and thesubstrate contact is automatically generated in the found part area. Tofind a part area where the substrate contact can be placed, a techniqueof seeing all layers of a diffusion layer, a polysilicon layer, etc., atechnique of seeing standard cells and block cells and determining thatthe substrate contact cannot be placed in the cells, or the like can beused.

As described above, in the embodiment, a substrate contact of n+diffusion layer-N well type is generated for the power supply VDD or asubstrate contact of p+ diffusion layer-P well type is generated for thepower supply VSS by performing mask operation, whereby a path flowinginto the diffusion layer is provided even in the configuration to whicha protection diode is not added. Thus, to connect an unused pin to apower supply trunk and fix the potential of the unused pin, an antennarule error is not caused. Since the well potential tends to be stable,noise resistance, latch-up resistance, and the like of the semiconductordevice are also improved.

FOURTH EMBODIMENT

Next, a semiconductor device, a semiconductor device design supportsystem, and a semiconductor device design method according to a fourthembodiment will be discussed with reference to FIGS. 6A to 6D. FIGS. 6Ato 6D are schematic diagrams to conceptually describe a layout of thesemiconductor device of the fifth embodiment.

The embodiment is characterized by the fact that when it is assumed thatthe ratio between the area of a wiring conductor conducting to a gateelectrode and the area of the gate electrode is an antenna ratio, eachwiring conductor conducting to a gate electrode in each wiring layer islimited to the area or wiring length as an antenna ratio of less than ahalf the allowed antenna ratio in the semiconductor device and isdivided into at least three parts for wiring.

The semiconductor device of the embodiment will be discussed withreference to the schematic diagrams of FIGS. 6A to 6D. FIG. 6Aschematically shows a wiring layout of metal wiring 902 of a jth wiringlayer connected to the input end of one inverter 901. In FIG. 6B, toprevent occurrence of such an antenna rule error for the long metalwiring 902 to exceed the allowable antenna ratio, the length of onesignal wiring that can be run on one wiring layer in a cell-to-cellwiring step is limited to a half the rule value or less. That is, thewiring is made up of metal wiring 912 of the jth wiring layer, metalwiring 913 of a (j+1)th wiring layer, and metal wiring 914 of the jthwiring layer. In FIG. 6C, the length is set to a third the rule value orless and the wiring is made up of metal wiring 922 of the jth wiringlayer, metal wiring 923 of the (j+1)st wiring layer, and metal wiring924 of the jth wiring layer.

For example, in FIG. 6A, assuming that when charges exceeding chargeamount Q are accumulated in the metal wiring 902, antenna damage occursin a gate oxide film of the inverter 901, the charge amount flowing intothe gate oxide film at the etching time of the (j+1)th wiring layer canbe reduced to about a little more than a half by dividing the metalwiring 902 of the jth wiring layer into three parts so that the wiringlength of the metal wiring 913 of the (j+1)st wiring layer becomes lessthan a half the antenna ratio as in FIG. 6B or the charge amount flowinginto the gate oxide film at the etching time of the (j+1)st wiring layercan be reduced to about two thirds by dividing the wiring into threeparts as in FIG. 6C; occurrence of antenna damage can be suppressed.

In FIG. 6D, the length of one signal wiring that can be run on onewiring layer is limited to a fifth the rule value or less, and thewiring is made up of metal wiring 932, 934, and 936 of the jth wiringlayer and metal wiring 933 and 935 of the (j+1)th wiring layer, wherebythe metal wiring 936 of the jth wiring layer (open portion), when itspattern is etched, is not connected to a gate oxide film of an inverter931 and charges are not accumulated in the metal wiring 934 of the jthwiring layer at the etching time of the (j+1)th wiring layer. Thus, thecharge amount flowing into the gate oxide film of the inverter 931 canbe reduced to about three fifths and occurrence of antenna damage can besuppressed.

As described above, in the embodiment, the length of wiring continuouslyrunning in the same wiring layer is limited to less than a half theoriginal antenna rule value and is divided into at least three parts,whereby wiring forcibly is changed, long wiring can be divided, and theantenna ratio of wiring can be suppressed; resultantly, the number ofantenna error occurrences can be decreased.

SIXTH EMBODIMENT

Next, a semiconductor device, a semiconductor device design supportsystem, and a semiconductor device design method according to a fifthembodiment will be discussed with reference to FIG. 2, FIGS. 7A to 7C,and FIG. 8. FIGS. 7A to 7C are schematic diagrams to conceptuallydescribe a layout of the semiconductor device of the fifth embodiment.FIG. 8 is a flowchart to describe the semiconductor device design methodof the fifth embodiment.

The embodiment is characterized by the fact that a position where an n+diffusion layer and a contact can or cannot be placed on a P well or aposition where a p+ diffusion layer and a contact can or cannot beplaced on an N well is defined as shape data of a cell to be registeredin a cell library 505 by registration means 511 or at a registrationstep S1101 and that whether or not a wiring conductor conducting to agate electrode becomes an antenna ratio exceeding an allowed antennaratio in the semiconductor device is determined by determination means514 or at a determination step S1104 and if the wiring conductor exceedsthe allowable antenna ratio, a placeable position or a position that isnot an unplaceable position is found and an n+ diffusion layer-P welltype protection diode or a p+ diffusion layer-N well type antennaprotection diode is inserted by insertion means 515 or at an insertionstep S1106.

The semiconductor device of the embodiment will be discussed withreference to the schematic diagrams of FIGS. 7A to 7C. FIG. 7A is aschematic diagram to illustrate a layout of placement and wiring in astandard cell method. In the figure, a cell 1001 comprising a NAND gatecircuit 1011, a cell 1002 comprising a NOT gate circuit 1012, and a cell1003 comprising a NAND gate circuit 1013 adjoin in placement. A VDDpower supply trunk 1005 is wired above the cells and a VSS power supplytrunk 1006 is wired below the cells. A wiring conductor 1004 isconnected to one input of the NAND gate circuit 1013.

For cells having comparatively an empty area, such as the cell 1002comprising the NOT gate circuit 1012, of the cells registered in thecell library 505, a position where an n+ diffusion layer and a contactcan be placed on a P well or a position where a p+ diffusion layer and acontact can be placed on an N well is previously defined in the form asshown in P01 in FIG. 7B.

In FIG. 7A, if the wiring conductor 1004 is determined wiring causing anantenna rule error, a placeable position is found on the path of thewiring conductor 1004 and as shown in FIG. 7C, an n+ diffusion layer-Pwell type protection diode 1022 is placed in the position P01 forpreventing an antenna rule error from occurring.

Next, semiconductor device design support system 502 of the embodimenthas the configuration shown in FIG. 2 like that of the secondembodiment. In the sixth embodiment, however, numeral 515 is insertionmeans for finding a placeable position in the proximity of the wiringconductor when an antenna rule error occurs and inserting an n+diffusion layer-P well type protection diode or a p+ diffusion layer-Nwell type antenna protection diode.

In the embodiment, a layout of the semiconductor device is designed asfollows: In the flowchart of FIG. 8, first at step S1101, a cell isregistered in the cell library 505 by the registration means 511. Aposition where an n+ diffusion layer and a contact can be placed on a Pwell or a position where a p+ diffusion layer and a contact can beplaced on an N well, namely, a position into which an n+ diffusionlayer-P well type protection diode or a p+ diffusion layer-N well typeantenna protection diode can be inserted is defined as the shape data ofthe registered cell. At step S1102, cells are combined and placed bycell placement means 512 while referencing the cell library 505according to given logical circuit specifications 501. At step S1103,wiring between the placed cells is determined by cell-to-cell wiringmeans 513 while referencing the cell library 505 according to the givenlogical circuit specifications 501.

Next, at step S1104, a wiring conductor is checked for antenna rule bydetermination means 514. That is, whether or not the wiring conductorconducting to a gate electrode satisfies the allowable antenna ratio isdetermined. If the wiring conductor exceeds the allowable antenna ratio(an antenna rule error occurs), the insertion means 515 finds a positionwhere a protection diode can be placed in the proximity of the wiringpath of the wiring conductor at step S1105 and inserts a protectiondiode into the found position at step S1106. Further, at step S1107,placement and wiring correction means 516 makes a minor correction tothe cell-to-cell wiring affected by inserting the protection diode. Ifno antenna rule error occurs at step S1104, then the layout design isterminated.

As described above, in the embodiment, to automatically insert aprotection diode, it is not necessary to determine the placementposition of the protection diode while seeing various related layers ofa diffusion area, polysilicon, etc., in a CAD (computer aided design)system, so that the processing amount in the CAD system may be verylight. Because of the structure forming a P well and an n+ diffusionlayer for a P well, an area increase can be suppressed as much as thewell separation distance as compared with a structure forming an N welland a p+ diffusion layer for a P well.

SIXTH EMBODIMENT

Next, a semiconductor device, a semiconductor device design supportsystem, and a semiconductor device design method according to a sixthembodiment will be discussed with reference to FIG. 2, FIGS. 9A and 9B,and FIG. 10. FIGS. 9A and 9B are schematic diagrams to conceptuallydescribe a layout of the semiconductor device of the eighth embodiment.FIG. 10 is a flowchart to describe the semiconductor device designmethod of the eighth embodiment.

The embodiment is characterized by the fact that whether or not a wiringconductor conducting to a gate electrode in the semiconductor device andhaving long wiring in the ith wiring layer exceeds an allowable antennaratio is determined by determination means 514 or at a determinationstep S1504 and if the wiring conductor exceeds the allowable antennaratio, the long wiring in the ith wiring layer is cut in the proximityof the gate electrode and the wiring conductor is formed by connectingthe short wiring conductor part in the ith wiring layer from the gateelectrode to the cut point and the long wiring conductor part in the ithwiring layer ahead the cut point by a bridge wiring conductor of alength as long as at least two grids in the jth wiring layer above theith wiring layer (i<j≦n) by insertion means 515 or at an insertion stepS1506.

The semiconductor device of the embodiment will be discussed withreference to the schematic diagrams of FIGS. 9A and 9B. As previouslydescribed in the related art, in such a layout where very long metalwiring 1407 exists in the ith wiring layer as shown in FIG. 9A, when themetal wiring 1407 in the ith wiring layer is etched, a drain diffusionlayer of an inverter 1401 is not connected to the metal wiring 1407 andthe wiring can cause antenna damage to a transistor gate oxide film ofthe inverter 1402. To counter the problem, in FIG. 9B, bridge wiring1403 in the (i+1)st wiring layer is inserted into long wiring in theproximity of a gate electrode of the inverter 1402.

When the metal wiring in the ith wiring layer is etched, long wiring1407 b in the ith wiring layer is disconnected from the gate electrodeof the inverter 1402 because the bridge wiring 1403 exists. As thebridge wiring 1403 exists, after the wiring conductor is divided, wiring1409 connected to the gate electrode side is shortened, also providingthe advantage of suppressing antenna damage to the gate oxide film ofthe inverter 1402.

Next, semiconductor device design support system 502 of the embodimenthas the configuration shown in FIG. 2 like that of the secondembodiment. In the eighth embodiment, however, numeral 515 is insertionmeans for cutting long wiring in the ith wiring layer where an antennarule error occurs in the proximity of the gate electrode and forming thewiring conductor by connecting the short wiring conductor part in theith wiring layer from the gate electrode to the cut point and the longwiring conductor part in the ith wiring layer ahead the cut point by abridge wiring conductor of a length as long as at least two grids in thejth wiring layer above the ith wiring layer.

In the embodiment, a layout of the semiconductor device is designed asfollows: In the flowchart of FIG. 10, first at step S1501, cells arepreviously registered in a cell library 505 by the registration means511. At step S1502, cells are combined and placed by cell placementmeans 512 while referencing the cell library 505 according to givenlogical circuit specifications 501. At step S1503, wiring between theplaced cells is determined by cell-to-cell wiring means 513 whilereferencing the cell library 505 according to the given logical circuitspecifications 501.

Next, at step S1504, a wiring conductor is checked for antenna rule bydetermination means 514. That is, whether or not the wiring conductorconducting to a gate electrode satisfies the allowable antenna ratio isdetermined. If the wiring conductor exceeds the allowable antenna ratio(an antenna rule error occurs) at step S1505 the insertion means 515cuts long wiring in the ith wiring layer in the proximity of the gateelectrode and forms the wiring conductor by connecting the short wiringconductor part in the ith wiring layer from the gate electrode to thecut point and the long wiring conductor part in the ith wiring layerahead the cut point by a bridge wiring conductor of a length as long asat least two grids in the jth wiring layer above the ith wiring layer(i<j≦n). Further, at step S1507, placement and wiring correction means516 makes a minor correction to the cell-to-cell wiring affected byprotection diode insertion. If no antenna rule error occurs at stepS1504, then the layout design is terminated.

In related art, if an antenna rule error occurs or does not occur, thestructure in FIG. 9A or 9B is adopted. However, with the semiconductordevice of the embodiment, bridge wiring as shown in FIG. 9B isintentionally placed in the proximity of the gate electrode. Further,bridge wiring formerly existing by chance was provided for routingsignal wiring. Thus, wiring in the “i+1” st wiring layer requires signalportions to climb up and down and stride over and therefore requires alength of at least three grids. The embodiment is intended for cuttinglong wiring in the ith wiring layer and connecting the cut parts viabridge wiring in the “i+1”st wiring layer, thus the wiring in the“i+1”st wiring layer needs to be only a length as long as at most twogrids. The bridge wiring of the length as long as two grids is of astructure that the former bridge wiring used in the meaning of stridingover another signal cannot have. The countermeasure against an antennarule error according to the embodiment is very practical because itneeds to be taken only in a wiring step and the necessity for taking thecountermeasure from a transistor step as in a technique of adding aprotection diode is eliminated.

Since wiring parts 1403, 1407 b, and 1409 via via-electrodes 1413 and1414 in FIG. 9B use the upper layer wiring of only a length as long astwo grids as compared with the long wiring 1407 in FIG. 9A, the signalwiring length, the parasitic load capacitance for the signal wiring, andthe like little change before and after the countermeasure against anantenna rule error according to the embodiment is taken. Thus, an eventin which the designer has a rethink to eliminate operation timing errorson logical circuit design after the countermeasure against an antennarule error is taken can little occur; efficient semiconductor devicedesign is enabled.

Further, a specific application example of the embodiment will bediscussed with reference to FIGS. 11A to 11D. FIG. 11A is a patterndiagram before bridge wiring countermeasure is taken, FIG. 11B is apattern diagram after bridge wiring countermeasure is taken, FIG. 11C isa schematic representation of bridge wiring with equal direction margin,and FIG. 11D is a schematic representation of bridge wiring withdifferent direction margin.

Here, an algorithm is used for finding an area of two or more contiguousempty grids in the jth wiring layer overlapping long wiring in the ithwiring layer is found from the side near a gate electrode relative tothe long wiring in the ith wiring layer by search means 517 (at findingstep 1505) and inserting the above-mentioned bridge wiring conductorinto the found area in insertion means 515.

For example, in FIG. 11A, assume that metal wiring 1601 c in the ithwiring layer is determined an antenna rule error in a wiring layouthaving metal wirings 1601 a to 1601 e in the ith wiring layer, metalwirings 1602 a to 1602 h in the (i+1)th wiring layer, and metal wiring1600 in the (i−1)th wiring layer leading to a gate oxide film.

In this case, as a countermeasure, an area of two or more contiguousempty grids in the (i+1)th wiring layer above the metal wiring 1601 c inthe ith wiring layer is found from the side connected to the metalwiring 1600 in the (i−1)th wiring layer near the gate oxide film. If twocontiguous empty grids do not exist, they may be generated. The metalwiring 1601 c in the ith wiring layer forming antenna wiring is cut intotwo parts in the area of the two contiguous empty grids and metal wiringcuts 1601 c′ and 1601″ in the ith wring layer are connected by bridgewiring 1603 in the (i+1)th wiring layer having a length of two grids.Triangle symbols of connection points in the figure denote connectionvia-electrodes of the ith wiring layer metal and the (i+1)th wiringlayer metal. In the specific example shown in FIGS. 11A to 11D, an areaof at least two contiguous empty grids is required in the (i+1)th wiringlayer, but a new wiring grid is not required in the ith wiring layervery small change is only required as a layout pattern and circuitperformance; the specific example is an ideal application example.

Since the description made so far assumes that the meal wiring is equaldirection margin to the via-electrodes as shown in FIG. 11C, thecountermeasure is provided by the bridge wiring 1603 of the two-gridlength. However, it should be noted that to connect bridge wiring in thelong direction of the contact form if the meal wiring is differentdirection margin from the via-electrodes as shown in FIG. 11D, thebridge wiring becomes a length of three grids (to connect bridge wiringin the short direction of the contact form, it may be a length of twogrids). The different direction margin is designed so that wiringpitches can be narrowed with one direction as marginless; projectionmetal called a reserver is added in order to provide a contact area andelectromigration resistance.

As described above, in the embodiment, if two empty grids of wiringexist in the jth wiring layer of an upper layer (or if two empty gridscan be generated), antenna damage or an antenna rule error can beprevented from occurring. The point where bridge wiring is placed isdetermined by finding an area from the side near the gate electrode oflong wiring, so that occurrence of antenna damage caused by theremaining wiring leading to the gate electrode side after the longwiring is cut by the bridge wiring can also be suppressed. Since emptygrids of wiring in the jth wiring layer are used, a large move of anyother wiring little occurs, the whole layout little changes before andafter the bridge wiring countermeasure against an antenna rule error istaken, and signal timing change on a large logical circuit does notoccur either. Since an upper wiring layer is used, if an mask order isstarted in order from the bottom in parallel with layout design toshorten the design period, a wiring layout of upper wiring layers can behandled easily to deal with the antenna rule and countermeasures againstan antenna rule error can be taken effectively.

First Modification of Sixth Embodiment

Next, a countermeasure to be taken if two or more contiguous empty gridsdo not exist in the jth wiring layer of an upper layer in the insertionmeans 515 (or search means 517 or at finding step 1505) will bediscussed.

In a first modification of the sixth embodiment, a first area of anempty grid in the jth wiring layer overlapping long wiring in the ithwiring layer is found from the side near a gate electrode relative tothe long wiring in the ith wiring layer, the position of the ith wiringlayer overlapping the first area is set to a cut point of the longwiring, the long wiring conductor ahead the cut point in the ith wiringlayer is moved to another empty area containing a second area in the jthwiring layer overlapping the cut point after the move, and the wiringconductor spread over the first and second areas is adopted as thebridge wiring conductor in the jth wiring layer.

FIG. 12 is layout pattern diagrams to describe a countermeasure to betaken if two or more contiguous empty grids of wiring do not exist inthe (i+1)th wiring layer; FIG. 12A is a pattern diagram beforecountermeasure is taken and FIG. 12B is a pattern diagram aftercountermeasure is taken. First, in FIG. 12A, assume that metal wiring1701 c in the ith wiring layer is determined an antenna rule error in awiring layout having metal wirings 1701 a to 1701 f in the ith wiringlayer, metal wirings 1702 a to 1702 i in the (i+1)ht wiring layer, andmetal wiring 1700 in the (i−1)th wiring layer leading to a gate oxidefilm.

In this case, as a countermeasure, first an area of two or morecontiguous empty grids in the (i+1)th wiring layer above the metalwiring 1701 c in the ith wiring layer is found from the side connectedto the metal wiring 1700 in the (i−1)th wiring layer near the gate oxidefilm, but is not found. Then, a first area of an empty grid in the(i+1)th wiring layer above the metal wiring 1701 c in the ith wiringlayer is found from the side near the gate oxide film. One end of bridgewiring in the (i+1)th wiring layer is taken from the first area and thewiring 1701 c in the ith wiring layer is cut as wiring 1701 c′. Next, asecond area of an empty grid in the nth wiring layer below the firstarea in the (i+1)th wiring layer is found and whether or not the wiringconductor in the ith wiring layer ahead the cut point can be moved to anempty area containing the second area is determined. If it can be movedto the area, the wiring conductor moved to the area as wiring 1701 e′and the second area is adopted as another end of the bridge wiring.

As described above, in the modified form, even if two or more contiguousempty grids of wiring do not exist in the jth wiring layer of an upperlayer, if a first area of an empty grid in the jth wiring layer, an areato which the wiring conductor ahead the cut point in the ith wiringlayer can be moved, and a second area of an empty grid in the jth wiringlayer can be found, antenna damage or an antenna rule error can bereliably prevented from occurring.

Second Modification of Sixth Embodiment

In a second modification of the sixth embodiment, if an insertion areacannot be determined, a first area of an empty grid in the jth wiringlayer overlapping long wiring in the ith wiring layer is found from theside near a gate electrode relative to the long wiring in the ith wiringlayer, a bridge wiring conductor in the jth wiring layer is inserted toa second area of a length as long as at least two grids from the firstarea, and wiring conductor in the ith wiring layer overlapping thesecond area is again wired.

Thus, even if two or more contiguous empty grids of wiring do not existin the jth wiring layer of an upper layer, if a first area of an emptygrid in the jth wiring layer can be found, antenna damage or an antennarule error can be reliably prevented from occurring. Since the wiringlayout is corrected as the wiring is shifted as a whole, the layout ofthe wiring conductors is not largely changed and the operation timing,etc., little changes before and after the countermeasure against anantenna rule error is taken.

A special case will be discussed with reference to FIGS. 13A and 13B. Inthe special case, as shown in FIG. 13A, if a wiring grid is empty in the(i+1)th wiring layer above wiring 1800 in the (i−1)th wiring layer to agate oxide film and there is a changeable point to the ith wiring layerbelow the grid, the empty grid above the wiring 1800 is used to installbridge wiring with the upper wiring layer. It seems that such a caseexists by accident and is extremely rare, but if any other wiring abovean input pin is forcibly removed and a wiring bridge with an upperwiring layer is added to the input pin and then a layout is again made,such a special case is applied.

Third Modification of Sixth Embodiment

In a third modification of the sixth embodiment, if an insertion areacannot be determined, a first area and a second area which arediscontiguous and contain each an empty grid in the jth wiring layeroverlapping long wiring in the ith wiring layer are found from the sidenear a gate electrode relative to the long wiring in the ith wiringlayer and a bridge wiring conductor in the kth wiring layer above thejth wiring layer (j<k≦n) is inserted between the first and second areas.

FIGS. 14 are layout pattern diagrams to describe a countermeasure to betaken if two or more contiguous empty grids of wiring do not exist inthe (i+1)th wiring layer; FIG. 14A is a pattern diagram beforecountermeasure is taken, FIG. 14B is a pattern diagram aftercountermeasure is taken, and FIG. 14C is a schematic diagram to describewiring after countermeasure is taken. First, in FIG. 14A, assume thatmetal wiring 1901 c in the ith wiring layer is determined an antennarule error in a wiring layout having metal wirings 1901 a to 1901 e inthe ith wiring layer, metal wirings 1902 a to 1902 h in the (i+1)thwiring layer, and metal wiring 1900 in the (i−1)th wiring layer leadingto a gate oxide film.

In this case, as a countermeasure, first an area of two or morecontiguous empty grids in the (i+1)th wiring layer above the metalwiring 1901 c in the ith wiring layer is found from the side connectedto the metal wiring 1900 in the (i−1)th wiring layer near the gate oxidefilm, but is not found. Then, if it can be checked that there are twodistant areas each containing an empty wiring grid in the (i+1)th wiringlayer above the metal wiring 1901 c in the ith wiring layer, the twoareas are connected by bridge wiring 1903 with metal wiring in the(i+2)th wiring layer, as shown in FIG. 14B. In the modified form, asshown in FIG. 14C, the (i+2)th wiring layer of an upper layer is used,but if two contiguous empty grids do not exist, the bridge wiringcountermeasure can be taken and the whole layout does not largely getout of shape, thus the modified form provides a convenientcountermeasure against an antenna rule error occurring in metal wiringin a lower layer.

As described above, according to the semiconductor device, thesemiconductor device design method, the semiconductor device designmethod recording medium, and the semiconductor device design supportsystem, antenna damage caused by an antenna effect occurring in a plasmastep at the metal wiring formation time in a semiconductor process canbe prevented. If antenna damage or an antenna rule error occurs, it canbe handled at high speed and precisely by automatic processing of a CADtool, etc. Further, countermeasures against antenna damage or an antennarule error can be taken with upper layer metal wiring as much aspossible by automatic processing of a CAD tool, etc. Resultantly, theantenna damage or antenna rule error can be handled with small-scalechange so that the operation timing on logical circuit design does notlargely change before and after the countermeasures are taken.

What is claimed is:
 1. A semiconductor device formed by combining andplacing previously registered functional blocks, and determining awiring pattern in accordance with given logical circuit specifications,said semiconductor device comprising: a first functional block includingat least one of: a first conduction type diode having a first conductiontype diffusion layer connected to an input pin of the first functionalblock and a second conduction type well connected to a second powersupply, and, a second conduction type diode having a second conductiontype diffusion layer connected to the input pin and a first conductiontype well connected to a first power supply; and a second functionalblock including the same logic and the same drive capability as thefirst functional block but not containing said first or secondconduction type diode, wherein either the first functional block or thesecond functional block is selectively used depending on whether or nota wiring conductor conducting to the input pin and a gate electrodebecomes an antenna ratio exceeding an allowed antenna ratio in saidsemiconductor device when the antenna ratio is a ratio between an areaof the wiring conductor conducting to the gate electrode and an area ofthe gate electrode.
 2. A semiconductor device design method for forminga semiconductor device by combining and placing previously registeredfunctional blocks, and determining a wiring pattern in accordance withgiven logical circuit specifications, said design method comprising: aregistration step of previously registering a first functional blockhaving a first conduction type diode comprising a first conduction typediffusion layer connected to an input pin of the functional block, and asecond conduction type well connected to a second power supply or asecond conduction type diode comprising a second conduction typediffusion layer connected to the input pin and a first conduction typewell connected to a first power supply and a second functional blockhaving the same logic as and the same drive capability as the firstfunctional block but not containing the first or second conduction typediode; a determination step of determining whether or not a wiringconductor conducting to the input pin and a gate electrode becomes anantenna ratio exceeding an allowed antenna ratio in said semiconductordevice when the antenna ratio is a ratio between an area of the wiringconductor conducting to the gate electrode and an area of the gateelectrode; and a selection step of selectively using the firstfunctional block, if said determination step determines that the inputpin conducts to the gate electrode exceeding the antenna ratio.
 3. Acomputer-readable recording medium storing the semiconductor devicedesign method as claimed in claim 2 as a program for causing a computerto execute the semiconductor device design method.
 4. A semiconductordevice design support system for automatically forming a semiconductordevice by combining and placing previously registered functional blocks,and determining a wiring pattern in accordance with given logicalcircuit specifications, said design support system comprising:registration means for previously registering a first functional blockhaving a first conduction type diode comprising a first conduction typediffusion layer connected to an input pin of the functional block and asecond conduction type well connected to a second power supply or asecond conduction type diode comprising a second conduction typediffusion layer connected to the input pin and a first conduction typewell connected to a first power supply and a second functional blockhaving the same logic as and the same drive capability as the firstfunctional block but not containing the first or second conduction typediode and; determination means for determining whether or not a wiringconductor conducting to the input pin and a gate electrode becomes anantenna ratio exceeding an allowed antenna ratio in said semiconductordevice when the antenna ratio is a ratio between an area of the workingconductor conducting to the gate electrode and an area of the gateelectrode; and selection means for selectively using the firstfunctional block, if said determination means determines that the inputpin conducts to the gate electrode exceeding the antenna ratio.